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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 22, Iss. 20 — Oct. 15, 1983
  • pp: 3297–3299

Improvement in the quantum efficiency of silicon photodetectors at near IR wavelengths by edge illumination

C. L. Fan and J. T. Boyd  »View Author Affiliations


Applied Optics, Vol. 22, Issue 20, pp. 3297-3299 (1983)
http://dx.doi.org/10.1364/AO.22.003297


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Abstract

The concept of illuminating a silicon photodetector along an edge to increase the light propagation path through the depletion region and thus to increase quantum efficiency at near IR wavelengths is introduced. Quantum efficiency measurements using both a GaAlAs laser and a He–Ne laser are included. These measurements show an improvement in quantum efficiency at λ = 0.83 μm for edge illumination over normal incidence of 75% for a photodiode and of 142% for a MOS capacitor photosensor.

© 1983 Optical Society of America

History
Original Manuscript: May 2, 1983
Published: October 15, 1983

Citation
C. L. Fan and J. T. Boyd, "Improvement in the quantum efficiency of silicon photodetectors at near IR wavelengths by edge illumination," Appl. Opt. 22, 3297-3299 (1983)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-22-20-3297


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References

  1. G. M. Borsuk, Proc. IEEE 69, 100 (1981). [CrossRef]
  2. W. C. Dash, R. Newman, Phys. Rev. 99, 1151 (1955). [CrossRef]
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  6. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
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