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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 22, Iss. 22 — Nov. 15, 1983
  • pp: 3569–3571

Log-converting processor element for CCD linear imaging arrays

S. H. Chang and J. T. Boyd  »View Author Affiliations


Applied Optics, Vol. 22, Issue 22, pp. 3569-3571 (1983)
http://dx.doi.org/10.1364/AO.22.003569


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Abstract

A photosensor element suitable for incorporation into charge-coupled device (CCD) imaging arrays in which the charge injected into the CCD is proportional to the logarithm of incident light intensity is presented. The photosensor element consists of a photodiode directly coupled to a two-stage MOSFET common source amplifier. This element occupies an area of 25 × 100 μm and is arranged so that it could be incorporated into a linear CCD imaging array having a period of 25 μm. A logarithmic response is measured over a 68.6-dB range of incident light intensity with a sensitivity of 55 mV/decade of light intensity.

© 1983 Optical Society of America

History
Original Manuscript: June 20, 1983
Published: November 15, 1983

Citation
S. H. Chang and J. T. Boyd, "Log-converting processor element for CCD linear imaging arrays," Appl. Opt. 22, 3569-3571 (1983)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-22-22-3569


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References

  1. M. F. Thompsett, C. H. Sequin, Charge Transfer Devices (Academic, New York, 1975).
  2. R. H. Dyck, “Design, Fabrication, and Performance of CCD Imagers,” in VLSI Electronics Microstructure Science, Vol. 3, N. G. Einspruch, Ed. (Academic Press, New York, 1982), pp. 65–107.
  3. R. Rappaport, RCA Rev. 21, 373 (1959).
  4. C. H. Sequin, A. M. Mohsen, IEEE J. Solid-State Circuits SC-10, 81 (1975). [CrossRef]
  5. K. Shimakura, T. Suzuki, Y. Yadoiwa, Solid-State Electron. 18, 991 (1975). [CrossRef]
  6. S. Horiuchi, R. Blanchard, Solid-State Electron. 18, 529 (1975). [CrossRef]

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