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Applied Optics

Applied Optics


  • Vol. 22, Iss. 8 — Apr. 15, 1983
  • pp: 1232–1236

Silicon detector nonlinearity and related effects

A. R. Schaefer, E. F. Zalewski, and Jon Geist  »View Author Affiliations

Applied Optics, Vol. 22, Issue 8, pp. 1232-1236 (1983)

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An explanation is put forth for the observed nonlinearity in the red spectral region of the response of silicon photodiodes. Experiments are described to support the explanation; and the results, implications, and precautions indicated for the use of these diodes are given. Correlation of nonlinearity with spatial nonuniformity of response is demonstrated.

© 1983 Optical Society of America

Original Manuscript: November 27, 1982
Published: April 15, 1983

A. R. Schaefer, E. F. Zalewski, and Jon Geist, "Silicon detector nonlinearity and related effects," Appl. Opt. 22, 1232-1236 (1983)

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  1. W. Budde, Appl. Opt. 18, 1555 (1979). [CrossRef] [PubMed]
  2. A. R. Schaefer, E. F. Zalewski, M. A. Lind, J. Geist, in Proceedings, Electro-Optics/Laser 77 Conference and Exposition (Industrial & Scientific Conference Management, Chicago, 1977), p. 459.
  3. The mention of a commercial product is provided for completeness of description of the experimental procedure and constitutes neither an endorsement by NBS nor the implication of optimum performance.
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