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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 23, Iss. 12 — Jun. 15, 1984
  • pp: 1940–1945

Induced junction (inversion layer) photodiode self-calibration

Robert L. Booker and Jon Geist  »View Author Affiliations


Applied Optics, Vol. 23, Issue 12, pp. 1940-1945 (1984)
http://dx.doi.org/10.1364/AO.23.001940


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Abstract

The potential of a newly available oxide-n+-p inversion layer silicon photodiode as a radiometric standard is discussed. Data are presented relating the quantum efficiency of these diodes as a function of oxide and reverse bias. The theory of a simple absolute reflectometer/detector device is described and in situ reflectance corrections for one of the diodes are determined to establish its absolute response. Radiant power measured with this diode, at ten wavelengths between 295 and 1014 nm, was then compared with that measured by reference to electrical substitution radiometry.

© 1984 Optical Society of America

History
Original Manuscript: January 9, 1984
Published: June 15, 1984

Citation
Robert L. Booker and Jon Geist, "Induced junction (inversion layer) photodiode self-calibration," Appl. Opt. 23, 1940-1945 (1984)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-23-12-1940


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References

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  13. UDT-UV100. This reference to a commercial product does not imply endorsement by NBS or that it is necessarily the best available for the particular application.
  14. E. F. Zalewski, C. R. Duda, “Silicon Photodiode Device with 100% External Quantum Efficiency,” Appl. Opt. 22, 2867 (1983). [CrossRef] [PubMed]

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