OSA's Digital Library

Applied Optics

Applied Optics


  • Vol. 23, Iss. 4 — Feb. 15, 1984
  • pp: 628–632

Interferometric method for checking the mask alignment precision in the lithographic process

G. Makosch and F. J. Schoenes  »View Author Affiliations

Applied Optics, Vol. 23, Issue 4, pp. 628-632 (1984)

View Full Text Article

Enhanced HTML    Acrobat PDF (570 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



An interferometric method is presented that has been successfully used to measure the alignment precision of different mask patterns superimposed on a silicon wafer in the lithographic process. Based on an extremely precise electrooptical phase measurement technique this method is capable of measuring the relative pattern displacement with precision in the nanometer region. The principle of the measurement technique is described. Results of experiments are discussed including suggestions for improving the measurement precision.

© 1984 Optical Society of America

Original Manuscript: June 27, 1983
Published: February 15, 1984

G. Makosch and F. J. Schoenes, "Interferometric method for checking the mask alignment precision in the lithographic process," Appl. Opt. 23, 628-632 (1984)

Sort:  Author  |  Year  |  Journal  |  Reset  


  1. H. Bohlen, J. Greschner, J. Keyser, W. Kulcke, P. NehmizIBM J. Res. Dev. 26, 568 (1982). [CrossRef]
  2. G. Makosch, B. Solf, Proc. Soc. Photo-Opt. Instrum. Eng. 316, 42 (1981).

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited