A novel etch process on silicon has been developed that consists of a conventional anisotropic etch process followed by stripping the protective oxide layer and etching the substrate once again in the anisotropic etch solution. As a result micron size patterns have been generated from a starting pattern size of 7 μm. These micron size patterns appear to have (111) sidewalls that can be used as templates for the graphoepitaxial process. We are currently exploring the possibility of generating submicron patterns using 2-μm size starting patterns.
© 1985 Optical Society of America
Original Manuscript: January 12, 1985
Published: June 15, 1985
S. Sriram and E. P. Supertzi, "Novel V-groove structures on silicon," Appl. Opt. 24, 1784-1787 (1985)