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Applied Optics

Applied Optics


  • Vol. 25, Iss. 21 — Nov. 1, 1986
  • pp: 3864–3870

Laser-induced damage and ion emission of GaAs at 1.06 μm

Austin L. Huang, Michael F. Becker, and Rodger M. Walser  »View Author Affiliations

Applied Optics, Vol. 25, Issue 21, pp. 3864-3870 (1986)

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This study focused on the multipulse laser damage and the subdamage threshold ion emission of GaAs. The initial goals were to determine the pulse-dependent damage threshold and to correlate ion emission with surface damage. A Q-switched Nd:YAG laser was used to irradiate the 〈100〉 GaAs samples. Using values of N from 1 to 100, we obtained accumulation curves based on 50% damage probability. Corresponding damage threshold fluences were 0.4–0.8 J/cm2 for N > 1 and 1.5 J/cm2 for N = 1. We observed large site-to-site fluctuations in ion emission and found the onset of emission at 0.2 J/cm2 for all cases. Once surface damage occurred, ion emission increased greatly. The observed behavior supports a surface cleaning model for the ion emission which precedes surface damage. Measurements of linear and nonlinear free carrier absorption were made, but no anomalous absorption was observed.

© 1986 Optical Society of America

Original Manuscript: April 18, 1986
Published: November 1, 1986

Austin L. Huang, Michael F. Becker, and Rodger M. Walser, "Laser-induced damage and ion emission of GaAs at 1.06 μm," Appl. Opt. 25, 3864-3870 (1986)

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  1. H. Kressel, H. Mierop, “Catastrophic Degradation in GaAs Injection Laser,” J. Appl. Phys. 38, 5419 (1967). [CrossRef]
  2. M. F. Becker, Y. K. Jhee, M. Bordelon, R. M. Walser, “Charged Particle Exoemission from Silicon during Multi-Pulse Laser Induced Damage,” in Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983); Y. K. Jhee, M. F. Becker, R. M. Walser, “Charge Emission and Precursor Accumulation in the Multiple-Pulse Damage Regime of Silicon,” J. Opt. Soc. Am. B 2, 1626 (1985). [CrossRef]
  3. S. Dannefaer, B. Hogg, D. Kerr, “Defect Characterization in Gallium Arsenide By Positron Annihilation,” in Thirteenth International Conference on Defects in Semiconductors, L. C. Kimerling, J. M. Parsey, Eds. (American Institute of Mining, Metallurgical, and Petroleum Engineers, New York, 1985), pp. 1029–1033.
  4. S. R. Foltyn, “Spotsize Effects in Laser Damage Testing,” in Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).
  5. C. S. Lee, N. Koumvakalis, M. Bass, “A Theoretical Model For Multiple-Pulse Laser-Induced damage to Metal Mirrors,” J. Appl. Phys. 54, 5727 (1983). [CrossRef]
  6. A. A. Manenkov, G. A. Matyushin, V. S. Nechitailo, A. M. Prokhorov, A. S. Tsaprilov, “On The Nature of Accumulation Effect in the Laser-Induced Damage to Optical Materials,” at Fourteenth ASTM Laser Damage Symposium, NBS Spec. Publ. 669 (1983).
  7. J. R. Meyer, M. R. Kruer, F. J. Bartoli, “Optical Heating in Semiconductors: Laser Damage in Ge, Si, InSb, and GaAs,” J. Appl. Phys. 51, 5513 (1980). [CrossRef]
  8. J. L. Smith, “Surface Damage of GaAs from 0.694 and 1.06 mm Laser Radiation,” J. Appl. Phys. 43, 3399 (1972). [CrossRef]
  9. P. M. Fauchet, A. E. Siegman, “Surface Ripples on Silicon and Gallium Arsenide under Picosecond Laser Illumination,” Appl. Phys. Lett. 40, 824 (1982). [CrossRef]
  10. E. W. Van Stryland, M. A. Woodall, H. Vanherzeele, M. J. Soileau, “Energy Band-Gap Dependence of Two-Photon Absorption,” Opt. Lett. 10, 490 (1985). [CrossRef] [PubMed]
  11. T. F. Boggess, K. M. Bohnert, K. Mansour, S. C. Moss, I. W. Boyd, A. L. Smirl, “Simultaneous Measurement of the Two-photon Coefficient and Free-carrier Cross Section Above the Bandgap of Crystalline Silicon,” IEEE J. Quantum Electron. QE-22, 360 (1986). [CrossRef]
  12. R. K. Willardson, A. C. Beer, Semiconductors and Semimetals: Optical Properties of III-V Compounds, Vol. 3, (Academic, New York, 1967), p. 409.
  13. D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, W. Wiegmann, “Room Temperature Excitonic Nonlinear Absorption and Refraction in GaAs/AlGaAs Multiple Quantum Well Structures,” IEEE J. Quantum. Electron. QE-20, 265 (1984). [CrossRef]
  14. A. Z. Grasyuk, I. G. Zubarev, “Interaction of Semiconductors with Intense Light Fluxes,” Sov. Phys. Semicond. 3, 576 (1969).
  15. K. L. Merkle, R. H. Uebbing, H. Baumgart, F. Phillipp, “Picosecond Laser Pulse Induced Damage in Crystalline Silicon,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982), pp. 337–342.
  16. J. A. van Vechten, A. D. Compaan, “Plasma Annealing State of Semiconductors; Plasmon Condensation to a Superconductivity Like State at 1000 K?,” Solid State Commun. 39, 867 (1981). [CrossRef]
  17. D. M. Kim, R. R. Shah, D. Von der Linde, D. L. Crosthwait, “Picosecond Dynamics of Laser Annealing,” in Laser and Electron-Beam Interactions with Solids, B. R. Appleton, G. K. Celler, Eds. (Elsevier, New York, 1982) pp. 85–90.

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