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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 25, Iss. 21 — Nov. 1, 1986
  • pp: 3864–3870

Laser-induced damage and ion emission of GaAs at 1.06 μm

Austin L. Huang, Michael F. Becker, and Rodger M. Walser  »View Author Affiliations


Applied Optics, Vol. 25, Issue 21, pp. 3864-3870 (1986)
http://dx.doi.org/10.1364/AO.25.003864


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Abstract

This study focused on the multipulse laser damage and the subdamage threshold ion emission of GaAs. The initial goals were to determine the pulse-dependent damage threshold and to correlate ion emission with surface damage. A Q-switched Nd:YAG laser was used to irradiate the 〈100〉 GaAs samples. Using values of N from 1 to 100, we obtained accumulation curves based on 50% damage probability. Corresponding damage threshold fluences were 0.4–0.8 J/cm2 for N > 1 and 1.5 J/cm2 for N = 1. We observed large site-to-site fluctuations in ion emission and found the onset of emission at 0.2 J/cm2 for all cases. Once surface damage occurred, ion emission increased greatly. The observed behavior supports a surface cleaning model for the ion emission which precedes surface damage. Measurements of linear and nonlinear free carrier absorption were made, but no anomalous absorption was observed.

© 1986 Optical Society of America

History
Original Manuscript: April 18, 1986
Published: November 1, 1986

Citation
Austin L. Huang, Michael F. Becker, and Rodger M. Walser, "Laser-induced damage and ion emission of GaAs at 1.06 μm," Appl. Opt. 25, 3864-3870 (1986)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-25-21-3864


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