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Applied Optics

Applied Optics


  • Vol. 25, Iss. 7 — Apr. 1, 1986
  • pp: 1093–1098

Stress in optical waveguides. 1: Preforms

P. K. Bachmann, W. Hermann, H. Wehr, and D. U. Wiechert  »View Author Affiliations

Applied Optics, Vol. 25, Issue 7, pp. 1093-1098 (1986)

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The intrinsic stress properties of GeO2- and F-doped optical fiber preforms have been investigated in detail. The materials were prepared by low-pressure plasma-induced chemical vapor deposition (PCVD), and the dopant concentrations cover the range normally used in optical fiber manufacture (+1% > Δ > −1%). Homogeneously doped preform regions exhibit a constant stress level. This level is exclusively dependent on dopant concentrations. In GeO2-doped silica the stress increases linearly with the dopant concentration. For F-doped silica, however, this dependency is strongly nonlinear. A negative stress difference between undoped PCVD material and the substrate tube material can be explained by the reduced thermal expansion coefficient of PCVD-SiO2 caused by chlorine incorporated during the deposition step. The experiments agree excellently with theoretical predictions based on thermal expansion data.

© 1986 Optical Society of America

Original Manuscript: December 18, 1985
Published: April 1, 1986

P. K. Bachmann, W. Hermann, H. Wehr, and D. U. Wiechert, "Stress in optical waveguides. 1: Preforms," Appl. Opt. 25, 1093-1098 (1986)

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