An aluminum on n-type gallium arsenide Schottky diode with a prism coupler on the front face was illuminated by a p-polarized Nd:YAG laser to excite the surface plasma resonance in the aluminum barrier contact. The internal photoemission current and reflectance were measured simultaneously as a function of the angle of incidence. The excitation of the surface plasma resonance was observed by a dip in the reflectance which occurred at the same angle as a peak in the photoemission current. These effects disappeared in the case of s-polarization. Enhancement in the photoemission current by as much as a factor of 3 was obtained.
© 1987 Optical Society of America
Original Manuscript: November 26, 1986
Published: July 1, 1987
K. M. Torosian, A. S. Karakashian, and Y. Y. Teng, "Surface plasma-enhanced internal photoemission in gallium arsenide Schottky diodes," Appl. Opt. 26, 2650-2652 (1987)