Phase-change optical data storage in GaSb
Applied Optics, Vol. 26, Issue 22, pp. 4772-4772 (1987)
http://dx.doi.org/10.1364/AO.26.004772
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Abstract
The amorphous to crystalline transition in the semiconductor GaSb has been studied as a recording mechanism for write-once optical storage. Amorphous as-deposited films, 100 nm thick, are transformed locally to the crystalline state by a focused laser beam. This recording process can be accomplished within 10 ns. The dimensions of the crystalline marks can be accurately controlled. Optical storage media based on GaSb are suitable for the archival storage of information modulated according to the compact disk format.
© 1987 Optical Society of America
Citation
D. J. Gravesteijn, H. M. van Tongeren, M. Sens, T. Bertens, and C. J. van der Poel, "Phase-change optical data storage in GaSb," Appl. Opt. 26, 4772-4772 (1987)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-26-22-4772
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