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Applied Optics

Applied Optics


  • Vol. 27, Iss. 23 — Dec. 1, 1988
  • pp: 4798–4799

Nondestructive III–V epitaxial layer thickness measurements in the visible and near IR by reflectance spectroscopy

Lawrence E. Tarof  »View Author Affiliations

Applied Optics, Vol. 27, Issue 23, pp. 4798-4799 (1988)

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No abstract available.

Original Manuscript: April 16, 1988
Published: December 1, 1988

Lawrence E. Tarof, "Nondestructive III–V epitaxial layer thickness measurements in the visible and near IR by reflectance spectroscopy," Appl. Opt. 27, 4798-4799 (1988)

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  1. D. K. Gaskill et al., “Non-Destructive Characterization of Carrier Concentration and Thickness Uniformity for Semiconductors Using Infrared Reflectance Spectroscopy,” Proc. Soc. Photo-Opt. Instrum. Eng. 794, 231 (1987).
  2. M. Born, E. Wolf, Principles of Optics (Pergamon, New York, 1970).
  3. T. Moss, Optical Properties of Semiconductors (Butterworth, London, 1959).
  4. H. Casey et al., “Refractive Index of AlxGa1−xAs Between 1.2 and 1.8 eV,” Appl. Phys. Lett. 24(2), 63 (1974). [CrossRef]
  5. A. SpringThorpe, P. Mandeville, Bell-Northern Research; unpublished results.
  6. L. Tarof, C. Miner, A. SpringThorpe, “Epitaxial Layer Thickness Measurements by Reflection Spectroscopy,” submitted to J. Electron. Materials, 1988.

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