Stoichiometric amorphous films of InSb or GaSb are found to have very short (<15 ns) crystallization times when heated to temperatures close to their melting point. They can be used for write-once amorphous to crystalline optical recording. By adding Te to InSb the crystallization time can be tuned so that erasable crystalline to amorphous optical recording is feasible with a 1-μm sized circular erase spot. Carrier-to-noise ratios of more than 50 dB are achievable at compact disk (CD) recording conditions. The erasable medium allows for CD-type run-length-limited encoding at user bit densities of <0.6 μm/bit.
© 1988 Optical Society of America
Dirk J. Gravesteijn, "Materials developments for write-once and erasable phase-change optical recording," Appl. Opt. 27, 736-738 (1988)