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Grazing incidence reflectance of SiC films produced by plasma-assisted chemical vapor deposition

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Abstract

The grazing incidence reflectance of silicon carbide films produced by plasma-assisted chemical vapor deposition has been evaluated in the spectral region from 256 to 1216 Å. The results show that reflectivities higher than conventional coatings can be obtained on coatings deposited both on silicon wafers and quartz substrates. Potential application of silicon carbide films for EUV astronomical instruments will be discussed.

© 1988 Optical Society of America

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