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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 27, Iss. 9 — May. 1, 1988
  • pp: 1760–1763

Index grating lifetime in photorefractive GaAs

Li-Jen Cheng and Afshin Partovi  »View Author Affiliations


Applied Optics, Vol. 27, Issue 9, pp. 1760-1763 (1988)
http://dx.doi.org/10.1364/AO.27.001760


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Abstract

The index grating lifetime in liquid encapsulated Czochralski-grown undoped semi-insulating GaAs was measured using a beam coupling technique. The largest lifetime measured was ~8 s under a read beam intensity of 0.7 mW/cm2 with the grating periodicity being 0.63 μm. The measured value decreases to milliseconds as the read beam intensity and the grating periodicity increase to ~10 mW/cm2 and 4 μm, respectively. This range of grating lifetime in this material is adequate for its use in real-time spatial light modulators, reconfigurable beam steering devices, and dynamic memory elements for optical computing. In addition, the results suggest that the lifetime is sensitive to residual imperfections in the crystal.

© 1988 Optical Society of America

History
Original Manuscript: July 17, 1987
Published: May 1, 1988

Citation
Li-Jen Cheng and Afshin Partovi, "Index grating lifetime in photorefractive GaAs," Appl. Opt. 27, 1760-1763 (1988)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-27-9-1760


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References

  1. A. M. Glass, A. M. Johnson, D. H. Olsen, W. Simpson, A. A. Ballman, “Four-Wave Mixing in Semi-Insulating InP Using the Photorefractive Effect,” Appl. Phys. Lett. 44, 948 (1984). [CrossRef]
  2. M. B. Klein, “Beam Coupling in Undoped GaAs at 1.06 μm Using the Photorefractive Effect,” Opt. Lett. 9, 350 (1984). [CrossRef] [PubMed]
  3. G. C. Valley, A. L. Smirl, M. B. Klein, K. Bohnert, T. F. Boggess, “Picosecond Photorefractive Beam Coupling in GaAs,” Opt. Lett. 11, 647 (1986). [CrossRef] [PubMed]
  4. L. J. Cheng, A. Partovi, “Temperature and Intensity Dependence of Photorefractive Effect in GaAs,” Appl. Phys. Lett. 49, 1456 (1986). [CrossRef]
  5. J. Strait, A. M. Glass, “Photorefractive Four-Wave Mixing in GaAs Using Diode Lasers Operating at 1.3 μm,” Appl. Opt. 25, 338 (1986). [CrossRef] [PubMed]
  6. L. J. Cheng, G. Gheen, T. H. Chao, H. K. Liu, A. Partovi, J. Katz, “Spatial Light Modulation by Beam Coupling in GaAs Crystals,” Opt. Lett. 12, 705 (1987). [CrossRef] [PubMed]
  7. G. Gheen, L. J. Cheng, M. F. Rao, F. C. Wang, “Image Transfer in Photorefractive GaAs,” J. Appl. Phys. 62, 3991 (1987). [CrossRef]
  8. G. Gheen, L. J. Cheng, “Image Processing by Four-Wave Mixing in Photorefractive GaAs,” Appl. Phys. Lett. 51, 1481 (1987). [CrossRef]
  9. J. Strait, A. M. Glass, “Time-Resolved Photorefractive Four-Wave Mixing in Semiconductor Materials,” J. Opt. Soc. Am. B 3, 342 (1986). [CrossRef]
  10. G. C. Valley, M. B. Klein, “Optimal Properties of Photorefractive Materials for Optical Data Processing,” Opt. Eng. 22, 704 (1983). [CrossRef]
  11. P. Gunter, “Photorefractive Materials,” in Handbook of Laser Science and Technology, M. V. Weber, Ed. (CRC Press, Boca Raton, FL, 1986), Vol. 2, p. 343.
  12. R. A. Mullen, Photorefractive Measurements of Physical Parameters (Springer-Verlag, New York, 1984).
  13. M. Carrascosa, F. Agullo-Lopez, “Kinetics for Optical Erasure of Simusoidal Holographic Gratings in Photorefractive Materials,” IEEE J. Quantum Electron. QE-22, 1369 (1986). [CrossRef]
  14. L. Samuelson, “Defect Levels in Semiconductor Alloys,” in Proceedings, Thirteenth International Conference on Defects in Semiconductors (Metallurgical Society of AIME, Warrendale, PA, 1985), p. 101.
  15. G. C. Valley, “Simultaneous Electron/Hole Transport in Photorefractive Materials,” J. Appl. Phys. 59, 3363 (1986) and references cited therein. [CrossRef]
  16. P. Dobrilla, J. S. Blakemore, “Distribution of Residual Stress Dislocations, and EL2 in Czochralski-Grown Semi-Insulating GaAs,” J. Appl. Phys. 60, 169 (1986). [CrossRef]
  17. R. B. Bylsma, A. M. Glass, “Photorefractive Image of the Image of the Electrical Properties of Semiconductor Wafers,” in Proceedings, Topical Conference on Defect Recognition and Image Pattern II, Monterey, CA (27–28 Apr. 1987), to be published.

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