Laser frequencies were stabilized to the linear and saturated absorption spectral lines(LAS, SAS) in 87Rb vapors which were filled into two kinds of glass cell: cell A (87Rb vapor only) and cell B (87Rb vapor and buffer gases). The frequency shifts induced by the change of laser power density were −5 MHz/(mW/cm2) and −10 MHz/(mW/cm2) for cells A and B, respectively, when LAS was used. A frequency shift of −0.8 MHz/K was observed for cell B, which underwent a temperature change. However, such a temperature-induced shift was not observed for cell A. The highest frequency stability was 7.7 × 10−11 at a 70-s integration time.
© 1989 Optical Society of America
Original Manuscript: October 20, 1988
Published: September 1, 1989
Hiroyuki Furuta and Motoichi Ohtsu, "Evaluations of frequency shift and stability in rubidium vapor stabilized semiconductor lasers," Appl. Opt. 28, 3737-3743 (1989)