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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 28, Iss. 17 — Sep. 1, 1989
  • pp: 3737–3743

Evaluations of frequency shift and stability in rubidium vapor stabilized semiconductor lasers

Hiroyuki Furuta and Motoichi Ohtsu  »View Author Affiliations


Applied Optics, Vol. 28, Issue 17, pp. 3737-3743 (1989)
http://dx.doi.org/10.1364/AO.28.003737


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Abstract

Laser frequencies were stabilized to the linear and saturated absorption spectral lines(LAS, SAS) in 87Rb vapors which were filled into two kinds of glass cell: cell A (87Rb vapor only) and cell B (87Rb vapor and buffer gases). The frequency shifts induced by the change of laser power density were −5 MHz/(mW/cm2) and −10 MHz/(mW/cm2) for cells A and B, respectively, when LAS was used. A frequency shift of −0.8 MHz/K was observed for cell B, which underwent a temperature change. However, such a temperature-induced shift was not observed for cell A. The highest frequency stability was 7.7 × 10−11 at a 70-s integration time.

© 1989 Optical Society of America

History
Original Manuscript: October 20, 1988
Published: September 1, 1989

Citation
Hiroyuki Furuta and Motoichi Ohtsu, "Evaluations of frequency shift and stability in rubidium vapor stabilized semiconductor lasers," Appl. Opt. 28, 3737-3743 (1989)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-28-17-3737


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