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Applied Optics

Applied Optics


  • Vol. 28, Iss. 21 — Nov. 1, 1989
  • pp: 4556–4559

Analytical derivation of the structure of carrier lifetime and its nonlinear dependence on optical field intensity in semiconductor laser structures

G. Chiaretti, D. Reichenbach, C. Vaccarino, and M. Milani  »View Author Affiliations

Applied Optics, Vol. 28, Issue 21, pp. 4556-4559 (1989)

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The dependence of spontaneous carrier lifetime τs on the electromagnetic field in the laser cavity is discussed in the framework of a microscopic approach to laser dynamics. An analytical relationship between τs and the number of photons in the laser cavity is derived. The structure of τs suggests new experiments for the determination of microscopic parameters of the active region material (e.g., the intraband carrier lifetime τin). This relationship is nonlinear and does not exhibit any kind of singularity or discontinuity, as sometimes reported in the literature. The comparison between theory and experimental results is discussed.

© 1989 Optical Society of America

Original Manuscript: September 23, 1988
Published: November 1, 1989

G. Chiaretti, D. Reichenbach, C. Vaccarino, and M. Milani, "Analytical derivation of the structure of carrier lifetime and its nonlinear dependence on optical field intensity in semiconductor laser structures," Appl. Opt. 28, 4556-4559 (1989)

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