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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 28, Iss. 23 — Dec. 1, 1989
  • pp: 5095–5104

Optical measurement of the refractive index, layer thickness, and volume changes of thin films

A. H. M. Holtslag and P. M. L. O. Scholte  »View Author Affiliations


Applied Optics, Vol. 28, Issue 23, pp. 5095-5104 (1989)
http://dx.doi.org/10.1364/AO.28.005095


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Abstract

Preparation, measurement, and calculation methods are discussed for the determination of the complex index of refraction, the layer thickness, and induced volume changes of thin layers (due to a phase change, for example). The principle of the calculation is fitting a curve in the reflectance–transmittance plane measured on a range of layer thicknesses, instead of fitting the reflectance and transmittance as a function of independently measured layer thicknesses. This general method is applied to thin films of GaSb and InSb, in which a laser-induced amorphous-to-crystalline transition can be used in optical recording. The information essential for optical recording applications is measured quickly by making use of a stepwise prepared layer thickness distribution, while the complex refractive index and the layer thicknesses can also be calculated unambiguously.

© 1989 Optical Society of America

History
Original Manuscript: January 13, 1989
Published: December 1, 1989

Citation
A. H. M. Holtslag and P. M. L. O. Scholte, "Optical measurement of the refractive index, layer thickness, and volume changes of thin films," Appl. Opt. 28, 5095-5104 (1989)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-28-23-5095


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References

  1. D. J. Gravesteijn, H. F. J. J. van Tongeren, M. M. Sens, T. C. J. M. Bertens, C. J. van de Poel, “Phase-Change Optical Data Storage in GaSb,” Appl. Opt. 26, 4772–4776 (1988). [CrossRef]
  2. J. C. Manifacier, J. Gasiot, J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n, k and the thickness of a Weakly Absorbing Thin Film,” J. Phys. E. 9, 1002–1004 (1976). [CrossRef]
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  8. M. Born, E. Wolf, Principles of Optics (Pergamon, New York, 1980).
  9. M. Mansuripur, “Distribution of Light at and Near the Focus of High-Numerical-Aperture Objectives,” J. Opt. Soc. Am. A 3, 2086–2093 (1986). [CrossRef]
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  11. D. E. Aspnes, A. A. Studna, “Dielectric Functions and Optical Parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV,” Phys. Rev. B 27, 985–1009 (1983). [CrossRef]
  12. The value reported in Ref. 1 for na of a-GaSb at λ0 = 780 nm equals 4.6 − 1.2i instead of the printed value 4.6 − 0.2i: a printing error.
  13. Private communications to C. J. van de Poel, see Ref. 5.
  14. G. Bouwhuis, J. Braat, A. Huijser, J. Pasman, G. van Rosmalen, K. Schouhamer Immink, Principles of Optical Disk Systems (Hilger, Bristol, 1986).

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