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Applied Optics

Applied Optics


  • Vol. 29, Iss. 11 — Apr. 10, 1990
  • pp: 1595–1603

Two-dimensional spatial light modulators fabricated in Si/PLZT

Tsen-Hwang Lin, A. Ersen, J. H. Wang, S. Dasgupta, S. Esener, and S. H. Lee  »View Author Affiliations

Applied Optics, Vol. 29, Issue 11, pp. 1595-1603 (1990)

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We report in this paper the use of Si/PLZT technology in the fabrication of 2-D electrically and optically addressed spatial light modulators. First, a 12 × 12 electrically matrix addressed array was fabricated using simultaneous laser assisted diffusion and crystallization. Then, NMOS transistors exhibiting electron mobility of 550 cm2/V-s were fabricated in each unit cell of the matrix array and used to control the PLZT modulator. A dynamic range of 35:1 was achieved. A 16 × 16 optically addressed SLM array was also fabricated. In this case, to improve the optical sensitivity, a three-transistor CMOS detector-amplifier circuit was included in each unit cell of the array.

© 1990 Optical Society of America

Original Manuscript: January 13, 1989
Published: April 10, 1990

Tsen-Hwang Lin, A. Ersen, J. H. Wang, S. Dasgupta, S. Esener, and S. H. Lee, "Two-dimensional spatial light modulators fabricated in Si/PLZT," Appl. Opt. 29, 1595-1603 (1990)

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