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Fabry-Perot cavity oscillations of an AlxGa1−xAs photoluminescence spectrum

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Abstract

When the GaAs substrate of a 5-μm AlxGa1−x film is removed by chemical etching, oscillations in the film-layer-formed Fabry-Perot cavity are observed in the low temperature photoluminescence spectrum.

© 1990 Optical Society of America

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