When the GaAs substrate of a 5-µm AlxGa1-x film is removed by chemical etching, oscillations in the film-layerformed Fabry-Perot cavity are observed in the low temperature photoluminescence spectrum.
© 1990 Optical Society of America
J. L. Bradshaw, Robert P. Devaty, W. J. Choyke, and R. L. Messham, "Fabry-Perot cavity oscillations of an AlxGa1-xAs photoluminescence spectrum," Appl. Opt. 29, 2367-2369 (1990)