OSA's Digital Library

Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 29, Iss. 33 — Nov. 20, 1990
  • pp: 4938–4942

Resonance ionization mass spectrometry of AlxGa1−xAs: depth resolution, sensitivity, and matrix effects

S. W. Downey, R. F. Kopf, E. F. Schubert, and J. M. Kuo  »View Author Affiliations


Applied Optics, Vol. 29, Issue 33, pp. 4938-4942 (1990)
http://dx.doi.org/10.1364/AO.29.004938


View Full Text Article

Enhanced HTML    Acrobat PDF (669 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

Resonance ionization mass spectrometry (RIMS) of neutral atoms sputtered from III–V compound semiconductors such as AlxGa1−xAs provides information that is complementary to secondary ion mass spectrometry with the added advantages of rejecting mass interferences, retaining good sensitivity, and reducing matrix effects. A GaAs sample, delta doped with Be, is used to measure depth resolution and Be secondary ion and atom yield. Because of the coupling of the pulsed RIMS lasers and continuous sputtering beam, duty cycle factors are used to determine the atom yield. A 3-D model of the geometrical overlap of laser and sputtered atoms is developed to ascertain the same utilization efficiency in RIMS. About 30% of the atoms sputtered in 1 μs are calculated to be in the laser beam. The atom yield was found to be near unity. The time-gated RIMS useful yield is ~2%. RIMS is used to minimize matrix effects in a depth profile of a Be-implanted AlAs/Al0.2Ga0.8As heterostructure and shows that Be diffuses from higher Al-containing layers at concentrations near 1019 cm−3. The atomization of As is shown to be affected by the Al content in a GaAs/Al0.5Ga0.5As structure.

© 1990 Optical Society of America

History
Original Manuscript: March 14, 1990
Published: November 20, 1990

Citation
S. W. Downey, R. F. Kopf, E. F. Schubert, and J. M. Kuo, "Resonance ionization mass spectrometry of AlxGa1−xAs: depth resolution, sensitivity, and matrix effects," Appl. Opt. 29, 4938-4942 (1990)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-29-33-4938


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. A. A. Galuska, W. O. Wallace, N. Marquez, J. Uht, “SIMS Matrix Effects in AlxGa1−xAs: Influence of Instrumental Parameters,” Surf. Int. Anal. 14, 31–38. (1989). [CrossRef]
  2. J. E. Parks, M. T. Sparr, P. J. Cressman, “Sputter-Initiated Resonance Ionization Spectroscopy,” Thin Solid Films 108, 69–78 (1983); F. M. Kimock, J. P. Baxter, D. L. Pappas, P. H. Korbin, N. Winograd, “Solids Analysis Using Energetic Ion Bombardment and Multiphoton Resonance Ionization with Time-of-Flight Detection,” Anal. Chem. 56, 2782–2791 (1984). [CrossRef]
  3. E. F. Schubert, J. M. Kuo, R. F. Kopf, H. S. Luftman, L. C. Hopkins, N. J. Sauer, “Beryllium δ-Doping of GaAs Grown by Molecular-Beam Epitaxy,” J. Appl. Phys. 67, 1969–1979 (1990). [CrossRef]
  4. S. W. Downey, R. S. Hozack, “A Hybrid Resonance Ionization and Secondary Ionization Mass Spectrometer,” J. Vac. Sci. Technol. A 8, 791–796 (1990). [CrossRef]
  5. M. Meuris, W. Vandervorst, P. DeBisschop, D. Avau, “Mass and Energy Dependence of Depth Resolution Secondary Ionization Mass Spectrometry Experiments with Iodine, Oxygen and Cesium Beams on AlGaAs/GaAs Multilayer Structures,” Appl. Phys. Lett. 54, 1531–1533 (1989). [CrossRef]
  6. C. E. Young, M. J. Pellin, W. F. Calaway, B. Jorgensen, E. L. Schweitzer, D. M. Gruen, “Trace Surface Analysis via RIS/TOF Mass Spectrometry,” Inst. Phys. Conf. Ser. 84, 163–168 (1986).
  7. D. L. Pappas, D. M. Hrubowchak, M. H. Ervin, N. Winograd, “Atom Counting at Surfaces,” Science 243, 64–66 (1989). [CrossRef] [PubMed]
  8. P. Gelin, J. L. Debrun, O. Gobert, R. L. Inglebert, B. Dubreuil, “Resonant Ionization of Sputtered Neutral Atoms for Trace Analysis in High Purity Materials,” Nucl. Instrum. Methods Phys. Res. B 40/41, 290–292 (1989). [CrossRef]
  9. H. F. Arlinghaus, W. F. Callaway, C. E. Young, M. J. Pellin, D. M. Gruen, L. L. Chase, “High-Resolution Multiphoton Laser-Induced Fluorescence Spectroscopy of Zinc Atoms Ejected from Laser-Irradiated ZnS Crystals,” J. Appl. Phys. 65, 281–289 (1989). [CrossRef]
  10. J. F. Ziegler, J. P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1885).
  11. S. W. Downey, R. S. Hozack, “Reduction of Matrix Effects in Secondary Ion Mass Spectrometry by Resonance Ionization,” in Secondary Ion Mass Spectrometry, SIMS VII, A. Benninghoven, C. A. Evans, A. M. Huber, K. McKeegan, H. A. Storms, H. W. Werner, Eds. (Wiley, New York, 1990), 283–286.
  12. R. G. Wilson, F. A. Stevie, C. W. Magee, Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis (Wiley, New York, 1989), Chap. 2.
  13. R. Ludeke, R. M. King, E. H. C. Parker, “MBE Surfaces and Interface Studies,” in The Techniques and Physics of Molecular Beam Epitaxy, E. H. C. Parker, Ed. (Plenum, New York, 1985), p. 592.

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Figures

Fig. 1 Fig. 2 Fig. 3
 
Fig. 4
 

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited