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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 29, Iss. 4 — Feb. 1, 1990
  • pp: 559–569

Extrinsic silicon photodetector characterization

J. P. Garcia and E. L. Dereniak  »View Author Affiliations


Applied Optics, Vol. 29, Issue 4, pp. 559-569 (1990)
http://dx.doi.org/10.1364/AO.29.000559


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Abstract

A gallium doped silicon (Si:Ga) extrinsic photoconductive detector was tested for sensitivity and quickness of response. The developmental goal for this detector material was high speed operation without compromised detectivity (D*). The high speed, p-type infrared photoconductor, with photoconductive gain less than unity, was tested at 10.5 μm to determine an experimental value for the detectivity-bandwidth product of D*f* = 3.69 × 1018 cm-Hz3/2/W. Subsequently a theoretical model taking into account the optical absorption profile and majority-carrier-transport processes within the detector was developed. It agreed with experimental data and corroborated the theory.

© 1990 Optical Society of America

History
Original Manuscript: October 13, 1988
Published: February 1, 1990

Citation
J. P. Garcia and E. L. Dereniak, "Extrinsic silicon photodetector characterization," Appl. Opt. 29, 559-569 (1990)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-29-4-559


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References

  1. S. R. Borrello, “Detection Uncertainty,” Infrared Phys. 12, 267–270 (1972). [CrossRef]
  2. R. L. Williams, “Speed and Sensitivity Limitations of Extrinsic Photoconductors,” Infrared Phys. 9, 37–40 (1969). [CrossRef]
  3. S. Gaalema, Private Communication; Hughes Aircraft Corp., Industrial Products Division, Carlsbad, CA (1987).
  4. T. T. Braggins, H. M. Hobgood, J. C. Swartz, R. N. Thomas, “High Infrared Responsivity Indium-doped Silicon Detector Material Compensated by Neutron Transmutation,” IEEE Trans. Electron. Devices ED-27, 2–10 (1980). [CrossRef]
  5. A. B. O’Connor, “Detectivity Measurements on the Si:Ga Detector” (Unpublished).
  6. E. L. Dereniak, J. P. Garcia, D. L. Perry, “Voltage-mode Operation of PbSnTe Laser Diodes” (Unpublished).
  7. W. L. Wolfe, G. J. Zissis, Eds., The Infrared Handbook (Superintendent of Documents. Washington, DC1985), pp. 2–78.
  8. L. P. Huelsman, P. E. Allen, Introduction to the Theory and Design of Active Filters (McGraw-Hill, New York, 1980), pp. 93–97.
  9. E. L. Dereniak, D. G. Crowe, Optical Radiation Detectors (Wiley, New York, 1984).
  10. N. Sclar, “Extrinsic Silicon Detectors for 3–5 and 8–14 μm,” Infrared Phys. 16, 435–448 (1976). [CrossRef]

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