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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 29, Iss. 4 — Feb. 1, 1990
  • pp: 559–569

Extrinsic silicon photodetector characterization

J. P. Garcia and E. L. Dereniak  »View Author Affiliations


Applied Optics, Vol. 29, Issue 4, pp. 559-569 (1990)
http://dx.doi.org/10.1364/AO.29.000559


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Abstract

A gallium doped silicon (Si:Ga) extrinsic photoconductive detector was tested for sensitivity and quickness of response. The developmental goal for this detector material was high speed operation without compromised detectivity (D*). The high speed, p-type infrared photoconductor, with photoconductive gain less than unity, was tested at 10.5 μm to determine an experimental value for the detectivity-bandwidth product of D*f* = 3.69 × 1018 cm-Hz3/2/W. Subsequently a theoretical model taking into account the optical absorption profile and majority-carrier-transport processes within the detector was developed. It agreed with experimental data and corroborated the theory.

© 1990 Optical Society of America

History
Original Manuscript: October 13, 1988
Published: February 1, 1990

Citation
J. P. Garcia and E. L. Dereniak, "Extrinsic silicon photodetector characterization," Appl. Opt. 29, 559-569 (1990)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-29-4-559

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