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Applied Optics

Applied Optics


  • Vol. 29, Iss. 6 — Feb. 20, 1990
  • pp: 827–835

Electrical performance of laser damaged silicon photodiodes

Steve E. Watkins, Chen-Zhi Zhang, Rodger M. Walser, and Michael F. Becker  »View Author Affiliations

Applied Optics, Vol. 29, Issue 6, pp. 827-835 (1990)

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Laser induced electrical parameter degradation and morphological damage have been observed in silicon photodiodes. The samples were RCA reach-through avalanche photodiodes and EG&G PIN photodiodes. The laser source was a 1064-nm Q-switched Nd:YAG laser (10-Hz, 10-ns pulses with a 300-μm spot radius). Reverse saturation current, noise current, breakdown voltage, junction capacitance, and surface morphology were monitored for permanent laser induced change. The current characteristics were clearly the most sensitive electrical parameters; however, the electrical performance was generally insensitive to severe surface morphological damage. The damage behavior indicated that the electrical degradation in photodiodes may be modeled by the introduction of defects into the depletion region by deep melting transients.

© 1990 Optical Society of America

Original Manuscript: August 15, 1989
Published: February 20, 1990

Steve E. Watkins, Chen-Zhi Zhang, Rodger M. Walser, and Michael F. Becker, "Electrical performance of laser damaged silicon photodiodes," Appl. Opt. 29, 827-835 (1990)

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  1. M. Kruer, L. Esterowitz, F. Bartoli, R. Allen, “Thermal Analysis of Laser Damage in Thin-Film Photoconductors,” J. Appl. Phys. 47, 2867–2874 (1976). [CrossRef]
  2. F. Bartoli, L. Esterowitz, R. Allen, M. Kruer, “A Generalized Thermal Model for Laser Damage in Infrared Detectors,” J. Appl. Phys. 47, 2875–2881 (1976). [CrossRef]
  3. Y. Matsuoka, A. Usami, “Normal Laser Damage of Silicon Solar Cells without Phase Change,” Appl. Phys. Lett. 25, 574–576 (1974). [CrossRef]
  4. J. F. Giuliani, C. L. Marquardt, “Electrical Effects in Laser-Damaged Phototransistors,” J. Appl. Phys. 45, 4993–4996 (1974). [CrossRef]
  5. D. L. Parker, F. Lin, S. Zhu, D. Zhang, W. A. Porter, “Selective Lifetime Doping in Silicon by Laser Scanning,” IEEE Trans. Electron. Devices ED-29, 1718–1722 (1982). [CrossRef]
  6. M. A. Acharekar, “Laser Damage in Silicon Avalanche Photodiode,” Laser Induced Damage in Optical Materials: 1987 (Nat. Inst. Stand. Technol. (US) Spec. Publs. 756, 50 (1988). [CrossRef]
  7. M. Kruer, R. Allen, L. Esterowitz, F. Bartoli, “Laser Damage in Silicon Photodiodes,” Opt. Quantum Electron. 8, 453–458 (1976). [CrossRef]
  8. S. E. Watkins, C. Zhang, R. M. Walser, M. F. Becker, “Laser-Induced Electrical Parameter Degradation in Silicon Photodiodes,” Twentieth Symposium on Optical Materials for High Power Lasers, Boulder, Colorado, 25–28 Oct. 1988 (proceedings to be published by NIST).
  9. J. Shin, R. M. Walser, M. F. Becker, “Relating Transient Reflectivity to Laser-Induced Damage of Silicon Surfaces,” submitted for publication to IEEE J. Quantum Electron.
  10. M. F. Becker, R. M. Walser, Y. K. Jhee, D. Y. Sheng, “Picosecond Laser Damage Mechanisms at Semiconductor Surfaces,” Proc. Soc. Photo-Opt. Instrum. Eng. 322, 93–98 (1982).
  11. S. P. Fry, R. M. Walser, M. F. Becker, “New Data Regarding the Thermal Laser-Damage Model and the Accumulation Phenomena in Silicon,” Laser Induced Damage in Optical Materials: 1987, Nat. Inst. Stand. Technol. (U.S.) Spec. Publs. 756, 492 (1988). [CrossRef]
  12. P. Webb, RCA Electro Optics; personal communication (1988).
  13. Y. K. Jhee, M. F. Becker, R. M. Walser, “Charge Emission and Precursor Accumulation in the Multiple-Pulse Damage Regime of Silicon,” J. Opt. Soc. Am. B 2, 1626–1633 (1985). [CrossRef]
  14. A. A. Manenkov, G. A. Matyushin, V. S. Nechitailo, A. M. Prokhorov, A. S. Tsaprilov, “Nature of the Cumulative Effect in Laser Damage to Optical Materials,” Sov. J. Quantum Electron. 13, 1580–1583 (1983). [CrossRef]
  15. R. J. McIntyre, “Multiplication Noise in Uniform Avalanche Diodes,” IEEE Trans. Electron. Devices ED-13, 164–168 (1966). [CrossRef]
  16. A. L. Smirl, T. F. Boggess, I. W. Boyd, S. C. Moss, K. Bohnert, K. Mansour, “Application of Nonlinear Optical Properties and Melt Dynamics of Crystalline Silicon to Optical Limiting of 1 μm Picosecond Radiation,” Opt. Eng. 25, 157–165 (1986). [CrossRef]

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