Abstract
Optical reflectivity measurements show that the reflectivity of Ge is dramatically reduced in the wavelength 0.3–1.4-μm range after high dose oxygen ion implantation. To explain such greatly reduced reflectivity, a model has been developed for the reflectivity of high dose oxygen implanted germanium. Our experimentally measured and calculated reflectivities show that, for a layered structure consisting of a Ge and GeO2 mixture on Ge on GeO2 on a Cu substrate, a low reflectivity of 0–10% in the solar spectrum is obtained, together with a high reflectivity ~100% in the 1.7–25-μm wavelength range. This is close to that of an ideal selective surface for solar energy thermal collectors operating at high temperatures from 300 to 500°C.
© 1991 Optical Society of America
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