Photoresponse of ion-damaged germanium
Applied Optics, Vol. 30, Issue 21, pp. 2920-2921 (1991)
http://dx.doi.org/10.1364/AO.30.002920
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Abstract
Ion implantation was used to create predetermined defect densities to examine photoresponse for optoelectronic switch applications. Ion-damaged germanium shows a significant decrease in photoresponsivity with implant dose, particularly with doses exceeding the critical amorphizing dose (Dc ∼ 1 × 1014 cm−2).
© 1991 Optical Society of America
Citation
Stephen D. Russell, "Photoresponse of ion-damaged germanium," Appl. Opt. 30, 2920-2921 (1991)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-30-21-2920
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