Ion implantation was used to create predetermined defect densities to examine photoresponse for optoelectronic switch applications. Ion-damaged germanium shows a significant decrease in photoresponsivity with implant dose, particularly with doses exceeding the critical amorphizing dose (Dc ∼ 1 × 1014 cm−2).
© 1991 Optical Society of America
Stephen D. Russell, "Photoresponse of ion-damaged germanium," Appl. Opt. 30, 2920-2921 (1991)