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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 30, Iss. 28 — Oct. 1, 1991
  • pp: 4119–4123

Improved VO2 thin films for infrared switching

Francine C. Case  »View Author Affiliations


Applied Optics, Vol. 30, Issue 28, pp. 4119-4123 (1991)
http://dx.doi.org/10.1364/AO.30.004119


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Abstract

Vanadium dioxide (VO2) undergoes a thermally induced phase transition from a semiconductor to a metal near 68°C. The deposition of VO2 thin films by using a process of activated-reactive evaporation provides high-quality VO2-film material; specifically, the semiconducting phase-extinction coefficient in the infrared is reduced by an order of magnitude without detrimental effect on the corresponding metal phase coefficient. The materials improvement significantly enhances accessible performance limits for optical switching devices, as compared with VO2 thin films deposited by both standard reactive and ion-assisted reactive evaporation.

© 1991 Optical Society of America

History
Original Manuscript: November 2, 1990
Published: October 1, 1991

Citation
Francine C. Case, "Improved VO2 thin films for infrared switching," Appl. Opt. 30, 4119-4123 (1991)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-30-28-4119


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References

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