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Applied Optics

Applied Optics


  • Vol. 30, Iss. 28 — Oct. 1, 1991
  • pp: 4119–4123

Improved VO2 thin films for infrared switching

Francine C. Case  »View Author Affiliations

Applied Optics, Vol. 30, Issue 28, pp. 4119-4123 (1991)

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Vanadium dioxide (VO2) undergoes a thermally induced phase transition from a semiconductor to a metal near 68°C. The deposition of VO2 thin films by using a process of activated-reactive evaporation provides high-quality VO2-film material; specifically, the semiconducting phase-extinction coefficient in the infrared is reduced by an order of magnitude without detrimental effect on the corresponding metal phase coefficient. The materials improvement significantly enhances accessible performance limits for optical switching devices, as compared with VO2 thin films deposited by both standard reactive and ion-assisted reactive evaporation.

© 1991 Optical Society of America

Original Manuscript: November 2, 1990
Published: October 1, 1991

Francine C. Case, "Improved VO2 thin films for infrared switching," Appl. Opt. 30, 4119-4123 (1991)

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  1. F. J. Morin, “Oxides which show metal-to-insulator transitions at the Neel temperature,” Phys. Rev. Lett. 3, 34–36 (1959). [CrossRef]
  2. J. B. Goodenough, “The two components of the crystallo-graphic transition in VO2,” J. Solid State Chem. 3, 490–500 (1971). [CrossRef]
  3. C. G. Granqvist, “Chromogenic materials for transmittance control of large area windows,” CRC Crit. Rev. Solid State Mater. Sci. (to be published).
  4. F. C. Case, “Effects of low-energy low-flux ion bombardment on the properties of VO2 thin films,” J. Vac. Sci. Technol. A 7, 1194–1198 (1989). [CrossRef]
  5. F. C. Case, “Influence of ion beam parameters on the electrical and optical properties of ion-assisted reactively evaporated vanadium dioxide thin films,” J. Vac. Sci. Technol. A 5, 1762–1766 (1987). [CrossRef]
  6. F. C. Case, “Total transmission of anomalous blue VO2 thin films,” Appl. Opt. 27, 1803–1806 (1988). [CrossRef] [PubMed]
  7. J. A. Thornton, “Plasma-assisted deposition processes: theory, mechanisms and applications,” Thin Solid Films 107, 3–19 (1983). [CrossRef]
  8. R. F. Bunshah, C. V. Deshpandey, “Plasma assisted physical vapor deposition: a review,” J. Vac. Sci. Technol. A 3, 553–560 (1985). [CrossRef]
  9. C. Achete, H. Niehus, W. Losch, “Silicide formation of thin vanadium layers in ultrahigh vacuum studied by ISS, AES, LEED and SIMS,” J. Vac. Sci. Technol. B 3, 1327–1331 (1985). [CrossRef]
  10. P. F. Bongers, “Anisotropy of the electrical conductivity of vanadium oxide single crystals,” Solid State Commun. 3, 275–278 (1965). [CrossRef]
  11. J. B. MacChesney, H. J. Guggenheim, “Growth and electrical properties of vanadium dioxide single crystals containing selected impurity ions,” J. Phys. Chem. Solids 30, 225–229 (1969). [CrossRef]
  12. W. E. Case, “Method for predicting and achieving highest optical switch performance from thin-film bistate materials,” J. Opt. Soc. Am. A 2, 71 (1985).

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