A silicon filament vacuum sealed incandescent light source has been fabricated using IC technology. The incandescent source consists of a heavily doped p+ polysilicon filament coated with silicon nitride and enclosed in a vacuum sealed (≈80-mT) cavity in the silicon chip surface. The filament is electrically heated to reach incandescence at a temperature near 1400 K. The power required to achieve this temperature for a filament 510 × 5 × 1 μm3 is 5 mW yielding a total optical power of 250 μm with a peak distribution wavelength near 2.5 μW. The radiation emitted by this source approximately follows Lambert’s cosine law. The energy conversion efficiency is 5%.
© 1991 Optical Society of America
Original Manuscript: May 7, 1989
Published: March 1, 1991
C. H. Mastrangelo, R. S. Muller, and S. Kumar, "Microfabricated incandescent lamps," Appl. Opt. 30, 868-873 (1991)