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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 31, Iss. 3 — Jan. 20, 1992
  • pp: 329–337

High-speed switching of far-infrared radiation by photoionization in a semiconductor

T. Vogel, G. Dodel, E. Holzhauer, H. Salzmann, and A. Theurer  »View Author Affiliations


Applied Optics, Vol. 31, Issue 3, pp. 329-337 (1992)
http://dx.doi.org/10.1364/AO.31.000329


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Abstract

An investigation of subnanosecond switching of 119-μm radiation achieved by irradiating high-resistivity silicon wafers with 1.7-ns, 337-nm pulses from a nitrogen laser is presented. The experimental results are compared with a one-dimensional numerical multilayer model, which accounts for the generation, recombination, and diffusion of the free carriers and the resulting change of the far-infrared optical properties of the Si wafer.

© 1992 Optical Society of America

History
Original Manuscript: August 4, 1990
Published: January 20, 1992

Citation
T. Vogel, G. Dodel, E. Holzhauer, H. Salzmann, and A. Theurer, "High-speed switching of far-infrared radiation by photoionization in a semiconductor," Appl. Opt. 31, 329-337 (1992)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-31-3-329

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