An investigation of subnanosecond switching of 119-μm radiation achieved by irradiating high-resistivity silicon wafers with 1.7-ns, 337-nm pulses from a nitrogen laser is presented. The experimental results are compared with a one-dimensional numerical multilayer model, which accounts for the generation, recombination, and diffusion of the free carriers and the resulting change of the far-infrared optical properties of the Si wafer.
© 1992 Optical Society of America
Original Manuscript: August 4, 1990
Published: January 20, 1992
T. Vogel, G. Dodel, E. Holzhauer, H. Salzmann, and A. Theurer, "High-speed switching of far-infrared radiation by photoionization in a semiconductor," Appl. Opt. 31, 329-337 (1992)