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Applied Optics

Applied Optics


  • Vol. 31, Iss. 4 — Feb. 1, 1992
  • pp: 460–465

Three-element stressed Ge:Ga photoconductor array for the infrared telescope in space

N. Hiromoto, T. Itabe, H. Shibai, H. Matsuhara, T. Nakagawa, and H. Okuda  »View Author Affiliations

Applied Optics, Vol. 31, Issue 4, pp. 460-465 (1992)

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A stressed Ge:Ga photoconductor array with three elements applied to the Infrared Telescope in Space satellite was fabricated and tested in experiments at 2.0 K in very low-photon-influx conditions (~105 photons/s). Stress was applied to three Ge:Ga detectors in a series by a stable and compact stressing apparatus by using cone-disk springs. The cutoff wavelength was ~180 μm. Responsivity was ~100 A/W, and the product of quantum efficiency and photoconductive gain, ηG, was ~1 with a chopping frequency of 2 Hz. The noise equivalent power was <5 × 10−18 W/Hz1/2 when low-noise transimpedance amplifiers were used. A slow transient response and a nonlinear response that was dependent on the background photon influx were observed in the experiments. The latter showed that the ηG had a time constant τc that was proportional to Nph−1/2.

© 1992 Optical Society of America

Original Manuscript: September 28, 1990
Published: February 1, 1992

N. Hiromoto, T. Itabe, H. Shibai, H. Matsuhara, T. Nakagawa, and H. Okuda, "Three-element stressed Ge:Ga photoconductor array for the infrared telescope in space," Appl. Opt. 31, 460-465 (1992)

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