The photoresist processes used for lithography at wavelengths from the deep UY to the soft x ray will need to accommodate the strong resist film absorbance inherent in this wavelength range. Already silylation processes have been demonstrated as manufacturable near-surface-imaged resists in the deep UV. In addition other chemistries are being developed that take advantage of near-surface or at-the-surface imaging. Together these new approaches to imaging will provide not only greater wavelength flexibility but have potential for improved exposure and focus tolerances as well. These attributes will become important as device dimensions are reduced from 0.35 down to 0.1 µm.

© 1993 Optical Society of America

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription

You do not have subscription access to this journal. Article level metrics are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Log in to access OSA Member Subscription