Abstract

We describe two pattern recognition algorithms for measuring half-micrometer focus–exposure dense photoresist line structures by using optical microscopes, such as a confocal scanning microscope and an interference microscope. The first approach depends on a data-clustering technique that allows us to measure resist lines down to 0.3 μm. The second method is an improved calibration procedure that utilizes multiple regression and moments of a cloud plot. Linearity between optical and scanning electron microscopy measurements is achieved down to 0.3 μm for nested focus–exposure resist structures with a standard deviation of 10 nm.

© 1994 Optical Society of America

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