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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 35, Iss. 10 — Apr. 1, 1996
  • pp: 1597–1604

Transient response in doped germanium photoconductors under very low background operation

S. E. Church, M. C. Price, N. M. Haegel, M. J. Griffin, and P. A. R. Ade  »View Author Affiliations


Applied Optics, Vol. 35, Issue 10, pp. 1597-1604 (1996)
http://dx.doi.org/10.1364/AO.35.001597


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Abstract

Doped germanium photoconductors are the most sensitive detectors for astronomy in the wavelength range 40–240 μm. Under the extremely low background conditions encountered in cooled satellite instruments, these devices exhibit a number of transient effects, such as slow relaxation after a step change in illumination or bias, and spontaneous spiking at high signal levels. Such behavior can degrade the excellent instantaneous sensitivity of these detectors and create calibration uncertainties. These effects have been observed in the Ge:Be photoconductors and the stressed and unstressed Ge:Ga photoconductors in the Long Wavelength Spectrometer, one of the instruments on the Infrared Space Observatory. A systematic investigation of the transient response of the Long Wavelength Spectrometer detectors to a step change in illumination as a function of operating temperature, bias electric field, and illumination step size has been carried out to determine operating conditions that minimize the effects of this behavior. The transient effects appear to be due primarily to carrier sweep out, but they are not fully explained by existing models for transient response.

© 1996 Optical Society of America

History
Original Manuscript: August 9, 1995
Revised Manuscript: October 18, 1995
Published: April 1, 1996

Citation
S. E. Church, M. C. Price, N. M. Haegel, M. J. Griffin, and P. A. R. Ade, "Transient response in doped germanium photoconductors under very low background operation," Appl. Opt. 35, 1597-1604 (1996)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-35-10-1597


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References

  1. P. R. Bratt, “Impurity germanium and silicon infrared detectors,” Semicond. Semimet. 12, 39–142 (1977). [CrossRef]
  2. S. W. Teitsworth, R. M. Westervelt, E. E. Haller, “Nonlinear oscillations and chaos in electrical breakdown in Ge,” Phys. Rev. Lett. 51, 825–828 (1983). [CrossRef]
  3. N. M. Haegel, J. W. Beeman, P. N. Luke, E. E. Haller, “Transient photoconductivity in Ge:Be due to Be+ formation,” Phys. Rev. B 39, 3677–3682 (1989). [CrossRef]
  4. N. M. Haegel, E. E. Haller, “Transient response of Ge:Be and Ge:Zn far-infrared photoconductors under low background photon flux conditions,” Infrared Phys. 26, 247–261 (1986). [CrossRef]
  5. N. Sclar, “Properties of doped silicon and germanium infrared detectors,” Prog. Quantum Electron. 9, 149–257 (1984). [CrossRef]
  6. J. W. Wensink, W. Luinge, D. Beintema, E. A. Valentijn, T. de Graauw, R. Katterloher, L. Barl, E. T. Young, “Characteristics of the ISO Short Wavelength Spectrometer detec-tors,” in Proceedings of the European Space Agency Symposium on Photon Detectors for Space Instrumentation (ESA, Nordwijk, 1992), SP-356, pp. 339–344.
  7. Battelle-Institut e.V., Am Römerhof 35, D-6000 Frankfurt a.M. 90, Germany.
  8. M. Overhamm, Battelle-Institut e.V., Am Römerhof 35, D-6000 Frankfurt a.M. 90, Germany (personal communication, 1992).
  9. Model TRS, Infrared Labs, Tucson, Ariz. 85719.
  10. S. E. Church, M. J. Griffin, P. A. R. Ade, M. C. Price, R. J. Emery, B. M. Swinyard, “Calibration and performance testing of doped-germanium photoconductors for the ISO Long Wavelength Spectrometer,” Infrared Phys. 34, 389–406 (1993). [CrossRef]
  11. Model JF4, Infrared Labs, Tucson, Ariz. 85719.
  12. S. M. Ryvkin, Photoelectric Effects in Semiconductors (Consul-tants Bureau, New York, 1964).
  13. B. I. Fouks, “Non-stationary behavior of low background photon detectors,” in Proceedings of the European Space Agency Symposium on Photon Detectors for Space Instrumentation (ESA, Nordwijk, 1992), SP-356, pp. 167–174, and references therein.
  14. N. M. Haegel, C. A. Latasa, A. M. White, “Transient response of infrared photoconductors: the roles of contacts and space charge,” Appl. Phys. A 56, 15–21 (1993). [CrossRef]
  15. E. E. Haller, R. E. MacMurray, L. M. Falicov, N. M. Haegel, W. L. Hansen, “Three holes bound to a double acceptor: Be+ in germanium,” Phys. Rev. Lett. 51, 1089–1091 (1983). [CrossRef]
  16. E. I. Gershenzon, G. N. Gol’tsman, A. P. Mel’nikov, “Binding energy of a carrier with a neutral impurity atom in germanium and in silicon,” Pis’ma Zh. Eksp. Teor. Fiz. 14, 281–282 (1971)[JETP Lett. 14, 185–186 (1971].
  17. M. C. Price, M. J. Griffin, S. E. Church, A. G. Murray, P. A. R. Ade, “Ionising radiation induced effects in doped germanium FIR photoconductors,” in Proceedings of the European Space Agency Symposium on Photon Detectors for Space Instrumentation (ESA, Nordwijk, 1992), SP-356, pp. 309–312.

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