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Applied Optics

Applied Optics


  • Vol. 35, Iss. 25 — Sep. 1, 1996
  • pp: 4998–5004

Infrared ellipsometry investigation of SiO x N y thin films on silicon

A. Brunet-Bruneau, G. Vuye, J. M. Frigerio, F. Abelès, J. Rivory, M. Berger, and P. Chaton  »View Author Affiliations

Applied Optics, Vol. 35, Issue 25, pp. 4998-5004 (1996)

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The dielectric function ɛ ˜ ( ɛ ˜ = ɛ1 + iɛ2) of silicon oxynitride films deposited on silicon wafers by dual ion-beam sputtering is determined by infrared ellipsometry between 580 and 5000 cm−1. The phase-separation model is unable to reproduce the experimental data. The dependence of ɛ ˜ on stoichiometry is analyzed with the microscopic Si-centered tetrahedron model. The random-bonding model with five SiO4− j N j (j = 0–4) tetrahedra gives a good description of the spectra, provided the dielectric function of the mixed tetrahedra is carefully chosen.

© 1996 Optical Society of America

Original Manuscript: November 15, 1995
Revised Manuscript: March 8, 1996
Published: September 1, 1996

A. Brunet-Bruneau, G. Vuye, J. M. Frigerio, F. Abelès, J. Rivory, M. Berger, and P. Chaton, "Infrared ellipsometry investigation of SiOxNy thin films on silicon," Appl. Opt. 35, 4998-5004 (1996)

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