Abstract
Numerous characterizations were performed on 120-nm thick evaporated SiO2 layers in order to understand how their features change as a function of deposition conditions and time. Density decreases with increasing deposition pressure. It governs all the layer properties (refractive index, hardness, and stress). In situ stress measurements show that stress can be divided into intrinsic and water-induced components, respectively linked to local density (outside the pores) and porosity. Intrinsic stress increase with decreasing pressure is explained by a diminution of the Si-O-Si bond angle (IR measurements). Long-term evolution is characterized by stress relaxation related to Si-O-Si strained bond hydrolysis.
© 1996 Optical Society of America
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