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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 35, Iss. 33 — Nov. 20, 1996
  • pp: 6438–6444

Low-frequency intensity noise in semiconductor lasers

M. M. Hall and J. L. Carlsten  »View Author Affiliations


Applied Optics, Vol. 35, Issue 33, pp. 6438-6444 (1996)
http://dx.doi.org/10.1364/AO.35.006438


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Abstract

The low-frequency intensity noise at 25 MHz of a Fabry–Perot semiconductor laser is measured as a function of injection current. All the measurements are taken at room temperature and the laser is operated with a commercial current source (the conditions under which laser diodes are often used). At the highest injection current of twice threshold, the intensity noise is 5.5 dB above the shot-noise limit. When the longitudinal side mode suppression of the laser is 20 dB or larger, the intensity noise is modeled adequately by an expression derived from the single-mode, small-signal, linearized, semiclassical rate equations. All the parameters used in the theory are derived or referenced.

© 1996 Optical Society of America

History
Original Manuscript: November 20, 1995
Revised Manuscript: July 2, 1996
Published: November 20, 1996

Citation
M. M. Hall and J. L. Carlsten, "Low-frequency intensity noise in semiconductor lasers," Appl. Opt. 35, 6438-6444 (1996)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-35-33-6438


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