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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 35, Iss. 34 — Dec. 1, 1996
  • pp: 6831–6832

Engineering & Laboratory Notes Hysterisis in DC Bias Drift of LiNbO3 Optical Modulators

Naoki Mitsugi and Hirotoshi Nagata  »View Author Affiliations


Applied Optics, Vol. 35, Issue 34, pp. 6831-6832 (1996)
http://dx.doi.org/10.1364/AO.35.006831


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Abstract

The dc drift of LiNbO3 (LN) optical intensity modulators is experimentally investigated from the viewpoint of the repeatability of the phenomenon. The drift has been assumed to be reversible and be independent of the magnitude of the applied dc bias. However, a bias voltage dependency of the dc drift is experimentally manifested here, especially under a high bias voltage. By an iterative dc bias application for the same LN modulator, the drift rate is increased, and a hysterisis appears in the drift/recovery cycles.

© 1996 Optical Society of America

Citation
Naoki Mitsugi and Hirotoshi Nagata, "Engineering & Laboratory Notes Hysterisis in DC Bias Drift of LiNbO3 Optical Modulators," Appl. Opt. 35, 6831-6832 (1996)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-35-34-6831


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References

  1. H. Nagata, J. Ichikawa, “Progress and problems in reliability of Ti:LiNbO3 optical intensity modulators,” Opt. Eng. 34 (11), 3284–3293 (1995). [CrossRef]
  2. H. Nagata et al., “Improved long-term dc drift in OH-reduced lithium niobate optical intensity modulators,” Eng. & Lab. Notes in Opt. & Phot. News 7 (5) (1996).
  3. M. Seino et al., “Improvement of dc-drift characteristics in Ti:LiNbO3 modulator,” Technical Report of IEICE, OSC95-66, 55–60 (1995) [in Japanese].
  4. M. Minakata, “LiNbO3 optical waveguide devices,” IEICE Transactions, J77-C-I, 194–205 (1994) [in Japanese].
  5. S. K. Korotky, J. J. Veselka, “RC circuit analysis of long-term Ti:LiNbO3 bias stability,” Technical Digest of IPR ’94 (Opt. Soc. Am., Washington, 1994), paper FB3.
  6. H. Nagata et al., “Estimation of direct current bias and drift of Ti:LiNbO3 optical modulators,” J. Appl. Phys. 76, 1405–1408 (1995). [CrossRef]
  7. H. Nagata et al., “Impurity evaluation of SiO2 film formed on LiNbO3 substrate,” Jpn. J. Appl. Phys. 34, 606–609 (1995). [CrossRef]

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