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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 35, Iss. 36 — Dec. 20, 1996
  • pp: 7061–7065

Laser-induced damage studies in silicon and silicon-based photodetectors

V. K. Arora and A. L. Dawar  »View Author Affiliations


Applied Optics, Vol. 35, Issue 36, pp. 7061-7065 (1996)
http://dx.doi.org/10.1364/AO.35.007061


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Abstract

Laser-induced damage studies have been carried out on single-crystal silicon and silicon-based photo-detectors, FND 100 P-I-N photodiodes, and C30954E avalanche photodiodes as a function of repetition frequency for a 1064-nm wavelength. It has been observed that the damage threshold decreases significantly when the samples are irradiated with a large number of pulses. However, this effect is evident only when the repetition frequency is greater than 1 Hz. The results are discussed in light of various existing theories.

© 1996 Optical Society of America

History
Original Manuscript: September 25, 1995
Revised Manuscript: January 25, 1996
Published: December 20, 1996

Citation
V. K. Arora and A. L. Dawar, "Laser-induced damage studies in silicon and silicon-based photodetectors," Appl. Opt. 35, 7061-7065 (1996)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-35-36-7061


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