Abstract
A commercially available germanium avalanche photodiode operating in the single-photon-counting mode has been used to perform time-resolved photoluminescence measurements on InGaAs/InP multiple-quantum-well structures. Photoluminescence in the spectral region of 1.3‒1.48 μm was detected with picosecond timing accuracy by use of the time-correlated single-photon counting technique. The carrier dynamics were monitored for excess photogenerated carrier densities in the range 1018−1015 cm−3. The recombination time is compared for similar InGaAs-based quantum-well structures grown by use of different epitaxial processes.
© 1996 Optical Society of America
Full Article | PDF ArticleMore Like This
Jason M. Smith, Philip A. Hiskett, and Gerald S. Buller
Opt. Lett. 26(10) 731-733 (2001)
A. Lacaita, F. Zappa, S. Cova, and P. Lovati
Appl. Opt. 35(16) 2986-2996 (1996)
Philip A. Hiskett, Gerald S. Buller, Alison Y. Loudon, Jason M. Smith, Ivair Gontijo, Andrew C. Walker, Paul D. Townsend, and Michael J. Robertson
Appl. Opt. 39(36) 6818-6829 (2000)