Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metal-organic chemical vapor deposition
Applied Optics, Vol. 36, Issue 13, pp. 2917-2922 (1997)
http://dx.doi.org/10.1364/AO.36.002917
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Abstract
Thin layers of GaN, a few micrometers thick, grown on sapphire substrate, are the basic structure in the rapidly developing GaN-based blue optoelectronics devices. We are looking for nondestructive, effective, and convenient characterization tools for GaN/sapphire. Ordinary Raman scattering measurements have limited use because strong Raman signals from the sapphire substrate overwhelm the GaN Raman features. We describe two techniques for making commercial laser Raman systems serve as convenient characterization tools for GaN/sapphire. One uses a near right-angle laser beam incidence, and the other uses microscope lens focusing. In these two ways the detected GaN Raman signals are much stronger than sapphire features, and correct assignments can be made quickly.
© 1997 Optical Society of America
Citation
Zhe Chuan Feng, Matthew Schurman, Richard A. Stall, Mark Pavlosky, and Andrew Whitley, "Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metal-organic chemical vapor deposition," Appl. Opt. 36, 2917-2922 (1997)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-36-13-2917
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