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Applied Optics

Applied Optics


  • Vol. 36, Iss. 15 — May. 20, 1997
  • pp: 3261–3270

Absolute concentration measurements of CH radicals in a diamond-depositing dc-arcjet reactor

J. Luque, W. Juchmann, and J. B. Jeffries  »View Author Affiliations

Applied Optics, Vol. 36, Issue 15, pp. 3261-3270 (1997)

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Laser-induced fluorescence in the CH (BX) and CH (AX) electronic transitions is used to measure absolute number density versus position for CH radicals in the plume of a 25-Torr hydrogen/argon/methane (0.8:1:0.005) dc arcjet during the chemical vapor deposition of diamond film. The laser-induced-fluorescence signal is calibrated with argon Rayleigh scattering, and the resultant concentration of the CH radical in the center of the arcjet plume is found to be (3.5 ± 0.8) × 1012 molecules/cm3. The characterization of the plasma plume shows three different regions in the reacting gas: nozzle, plume, and boundary layer. We observe substantial differences in spatial distribution of gas temperature, collisional quenching, and CH number density among these regions.

© 1997 Optical Society of America

Original Manuscript: August 20, 1996
Revised Manuscript: November 21, 1996
Published: May 20, 1997

J. Luque, W. Juchmann, and J. B. Jeffries, "Absolute concentration measurements of CH radicals in a diamond-depositing dc-arcjet reactor," Appl. Opt. 36, 3261-3270 (1997)

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