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Applied Optics

Applied Optics


  • Vol. 36, Iss. 30 — Oct. 20, 1997
  • pp: 7853–7859

Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs

Masahiko Tani, Shuji Matsuura, Kiyomi Sakai, and Shin-ichi Nakashima  »View Author Affiliations

Applied Optics, Vol. 36, Issue 30, pp. 7853-7859 (1997)

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Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs–based and SI-GaAs–based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the field screening of the photocarriers.

© 1997 Optical Society of America

Original Manuscript: August 26, 1996
Revised Manuscript: January 13, 1997
Published: October 20, 1997

Masahiko Tani, Shuji Matsuura, Kiyomi Sakai, and Shin-ichi Nakashima, "Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs," Appl. Opt. 36, 7853-7859 (1997)

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