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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 36, Iss. 34 — Dec. 1, 1997
  • pp: 8944–8951

High-numerical-aperture effects in photoresist

Donis G. Flagello and Tom D. Milster  »View Author Affiliations


Applied Optics, Vol. 36, Issue 34, pp. 8944-8951 (1997)
http://dx.doi.org/10.1364/AO.36.008944


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Abstract

Two-beam and three-beam vector interference in thin photoresist films is used to illustrate the striking differences between s-polarized and p-polarized high-numerical-aperture illumination. Both simulations and experiments are performed for several cases, including undyed photoresist on silicon, dyed photoresist on silicon, and the addition of an antireflective layer between the photoresist and the silicon. A 0.85 numerical-aperture system is examined. The major differences between s- and p-polarized illumination include elliptical versus rectangular features and lower contrast for p-polarized images.

© 1997 Optical Society of America

History
Original Manuscript: August 1, 1997
Revised Manuscript: August 1, 1997
Published: December 1, 1997

Citation
Donis G. Flagello and Tom D. Milster, "High-numerical-aperture effects in photoresist," Appl. Opt. 36, 8944-8951 (1997)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-36-34-8944

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