Performance of InGaAs/InP Avalanche Photodiodes as Gated-Mode Photon Counters
Applied Optics, Vol. 37, Issue 12, pp. 2272-2277 (1998)
http://dx.doi.org/10.1364/AO.37.002272
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Abstract
We investigate the performance of separate absorption multiplication InGaAs/InP avalanche photodiodes as single-photon detectors for 1.3- and 1.55-μm wavelengths. First we study afterpulses and choose experimental conditions to limit this effect. Then we compare the InGaAs/InP detector with a germanium avalanche photodiode; the former shows a lower dark-count rate. The effect of operating temperature is studied for both wavelengths. At 173 K and with a dark-count probability per gate of 10−4, detection efficiencies of 16% for 1.3 μm and 7% for 1.55 μm are obtained. Finally, a timing resolution of less than200 ps is demonstrated.
© 1998 Optical Society of America
OCIS Codes
(030.0030) Coherence and statistical optics : Coherence and statistical optics
(030.5260) Coherence and statistical optics : Photon counting
(230.5170) Optical devices : Photodiodes
(270.5570) Quantum optics : Quantum detectors
Citation
Grégoire Ribordy, Jean-Daniel Gautier, Hugo Zbinden, and Nicolas Gisin, "Performance of InGaAs/InP Avalanche Photodiodes as Gated-Mode Photon Counters," Appl. Opt. 37, 2272-2277 (1998)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-37-12-2272
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