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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 37, Iss. 12 — Apr. 20, 1998
  • pp: 2272–2277

Performance of InGaAs/InP avalanche photodiodes as gated-mode photon counters

Grégoire Ribordy, Jean-Daniel Gautier, Hugo Zbinden, and Nicolas Gisin  »View Author Affiliations


Applied Optics, Vol. 37, Issue 12, pp. 2272-2277 (1998)
http://dx.doi.org/10.1364/AO.37.002272


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Abstract

We investigate the performance of separate absorption multiplication InGaAs/InP avalanche photodiodes as single-photon detectors for 1.3- and 1.55-μm wavelengths. First we study afterpulses and choose experimental conditions to limit this effect. Then we compare the InGaAs/InP detector with a germanium avalanche photodiode; the former shows a lower dark-count rate. The effect of operating temperature is studied for both wavelengths. At 173 K and with a dark-count probability per gate of 10-4, detection efficiencies of 16% for 1.3 μm and 7% for 1.55 μm are obtained. Finally, a timing resolution of less than 200 ps is demonstrated.

© 1998 Optical Society of America

OCIS Codes
(030.0030) Coherence and statistical optics : Coherence and statistical optics
(030.5260) Coherence and statistical optics : Photon counting
(230.5170) Optical devices : Photodiodes
(270.5570) Quantum optics : Quantum detectors

History
Original Manuscript: September 15, 1997
Revised Manuscript: January 5, 1998
Published: April 20, 1998

Citation
Grégoire Ribordy, Jean-Daniel Gautier, Hugo Zbinden, and Nicolas Gisin, "Performance of InGaAs/InP avalanche photodiodes as gated-mode photon counters," Appl. Opt. 37, 2272-2277 (1998)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-37-12-2272


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References

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