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Applied Optics

Applied Optics


  • Vol. 37, Iss. 12 — Apr. 20, 1998
  • pp: 2407–2410

Direct bonding of Ti:sapphire laser crystals

Akira Sugiyama, Hiroyasu Fukuyama, Tsuneo Sasuga, Takashi Arisawa, and Hiroshi Takuma  »View Author Affiliations

Applied Optics, Vol. 37, Issue 12, pp. 2407-2410 (1998)

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Direct bonding without the use of adhesive materials was demonstrated on a titanium-doped sapphire laser crystal with a bonding surface dimension of 12 mm × 6 mm2. The bonding surfaces were treated with chemical processes to clean up and to create a hydrophilic (-OH) thin layer for hydrogen bonding. Two different processes of heat treatment performed in succession transformed the hydrogen bonding into direct bonding. The performance of the bonded crystal was tested by laser oscillation with the second harmonics of a Q-switched Nd:YAG laser at a 20-Hz repetition rate. In comparison with a normal laser crystal, there were no differences in output power or spatial profile in an input pumping condition of 30 mJ.

© 1998 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.3590) Lasers and laser optics : Lasers, titanium
(220.0220) Optical design and fabrication : Optical design and fabrication
(220.4830) Optical design and fabrication : Systems design
(350.0350) Other areas of optics : Other areas of optics
(350.4600) Other areas of optics : Optical engineering

Original Manuscript: August 12, 1997
Revised Manuscript: January 5, 1998
Published: April 20, 1998

Akira Sugiyama, Hiroyasu Fukuyama, Tsuneo Sasuga, Takashi Arisawa, and Hiroshi Takuma, "Direct bonding of Ti:sapphire laser crystals," Appl. Opt. 37, 2407-2410 (1998)

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  1. H. E. Meissner, Technical Application Note (Onyx Optics, Inc., 6551 Sierra Lane, Dublin, Calif. 94568, 1995).
  2. E. C. Honea, R. J. Beach, S. B. Sutton, J. A. Speth, S. C. Mitchell, J. A. Skidmore, M. A. Emanuel, S. A. Payne, “115-W Tm:YAG diode-pumped solid-state laser,” IEEE J. Quantum Electron. 33, 1592–1600 (1997). [CrossRef]
  3. D. W. Mordaunt, TRW, RI1196, One Space Park, Redondo Beach, Calif. 90278 (personal communication, 1996).
  4. M. Shimbo, K. Furukawa, K. Fukuda, K. Tanzawa, “Silicon–silicon direct bonding method,” J. Appl. Phys. 60, 2987–2989 (1986). [CrossRef]
  5. K. Furukawa, “Silicon wafer direct-bonding technique,” J. Jpn. Weld. Soc. 59, 105–109 (1990), in Japanese. [CrossRef]
  6. P. Singer, “Wafer cleaning: making the transition to surface engineering,” Semicond. Int. 18, 88–92 (1995).
  7. T. Suga, “Low temperature bonding by means of the surface activated bonding,” Mater. Jpn. 35, 496–500 (1996), in Japanese. [CrossRef]
  8. T. Furukawa, “Japan develops ceramic-metal bonding technique,” Am. Met. Mark. 100, (136), 4 (1992).

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