Propagation Effects in Electro-Optic Sampling of Terahertz Pulses in GaAs
Applied Optics, Vol. 37, Issue 15, pp. 3368-3371 (1998)
http://dx.doi.org/10.1364/AO.37.003368
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Abstract
Freely propagating terahertz pulses are detected in the time domain by electro-optic sampling in bulk GaAs. We investigate the influence of dispersion of the near-infrared sampling pulse on the transients by varying the thickness of the GaAs crystal. Pronounced propagation effects are identified that originate from the frequency dependence of the phase-matching condition between the terahertz and the sampling pulse.
© 1998 Optical Society of America
[Optical Society of America ]
OCIS Codes
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(300.6270) Spectroscopy : Spectroscopy, far infrared
(320.0320) Ultrafast optics : Ultrafast optics
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
Citation
Markus Vossebürger, Martin Brucherseifer, Gyu Cheon Cho, Hartmut G. Roskos, and Heinrich Kurz, "Propagation Effects in Electro-Optic Sampling of Terahertz Pulses in GaAs," Appl. Opt. 37, 3368-3371 (1998)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-37-15-3368
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