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Applied Optics

Applied Optics


  • Vol. 37, Iss. 19 — Jul. 1, 1998
  • pp: 4130–4136

Porosity depth profiling of thin porous silicon layers by use of variable-angle spectroscopic ellipsometry: a porosity graded-layer model

Leif A. A. Pettersson, Lars Hultman, and Hans Arwin  »View Author Affiliations

Applied Optics, Vol. 37, Issue 19, pp. 4130-4136 (1998)

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Variable-angle spectroscopic ellipsometry was used to determine nondestructively the porosity depth profile and thickness of thin porous silicon layers produced by anodization of p+-doped silicon wafers. A porosity graded-layer model is presented and used in the analysis of the material. In the porosity graded-layer model an inhomogeneous layer is built up by several thin sublayers with the porosity changing slightly from one sublayer to the next. Results from the ellipsometry analysis and from transmission electron microscopy reveal inhomogeneous layers whose porosity and thereby optical properties change with their depth in the layers.

© 1998 Optical Society of America

OCIS Codes
(040.6040) Detectors : Silicon
(080.2710) Geometric optics : Inhomogeneous optical media
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry

Original Manuscript: October 27, 1997
Published: July 1, 1998

Leif A. A. Pettersson, Lars Hultman, and Hans Arwin, "Porosity depth profiling of thin porous silicon layers by use of variable-angle spectroscopic ellipsometry: a porosity graded-layer model," Appl. Opt. 37, 4130-4136 (1998)

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