The antireflection properties of V-grooved gratings in (100)crystalline silicon are studied numerically by use of rigorouselectromagnetic theory. This study shows that these gratings canexhibit antireflective behavior only for TM-polarizedradiation. The V-grooved structures are analyzed as a function ofgrating period, duty cycle, and depth of a SiO<sub>2</sub> mask layerthat is added to the tops of the V-grooved mesas. Specificantireflection grating designs (the duty cycle and depth versus theperiod) are presented that illustrate TM-polarized reflectivity muchless than 10<sup>−3</sup> with periods as high as 80% the wavelengthof incident radiation. These designs exhibit good tolerance tofabrication errors and grating’s plane deviations in aplanar-diffraction mounting.
© 1998 Optical Society of America
Mark Auslender, David Levy, and Shlomo Hava, "One-Dimensional Antireflection Gratings in (100) Silicon: A Numerical Study," Appl. Opt. 37, 369-373 (1998)