The antireflection properties of V-grooved gratings in (100)crystalline silicon are studied numerically by use of rigorouselectromagnetic theory. This study shows that these gratings canexhibit antireflective behavior only for TM-polarizedradiation. The V-grooved structures are analyzed as a function ofgrating period, duty cycle, and depth of a SiO₂ mask layerthat is added to the tops of the V-grooved mesas. Specificantireflection grating designs (the duty cycle and depth versus theperiod) are presented that illustrate TM-polarized reflectivity muchless than 10⁻³ with periods as high as 80% the wavelengthof incident radiation. These designs exhibit good tolerance tofabrication errors and grating’s plane deviations in aplanar-diffraction mounting.

© 1998 Optical Society of America

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