The antireflection properties of V-grooved gratings in (100) crystalline silicon are studied numerically by use of rigorous electromagnetic theory. This study shows that these gratings can exhibit antireflective behavior only for TM-polarized radiation. The V-grooved structures are analyzed as a function of grating period, duty cycle, and depth of a SiO2 mask layer that is added to the tops of the V-grooved mesas. Specific antireflection grating designs (the duty cycle and depth versus the period) are presented that illustrate TM-polarized reflectivity much less than 10-3 with periods as high as 80% the wavelength of incident radiation. These designs exhibit good tolerance to fabrication errors and grating’s plane deviations in a planar-diffraction mounting.
© 1998 Optical Society of America
Original Manuscript: April 24, 1997
Revised Manuscript: July 15, 1997
Published: January 10, 1998
Mark Auslender, David Levy, and Shlomo Hava, "One-dimensional antireflection gratings in (100) silicon: a numerical study," Appl. Opt. 37, 369-373 (1998)