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Applied Optics

Applied Optics


  • Vol. 37, Iss. 2 — Jan. 10, 1998
  • pp: 369–373

One-dimensional antireflection gratings in (100) silicon: a numerical study

Mark Auslender, David Levy, and Shlomo Hava  »View Author Affiliations

Applied Optics, Vol. 37, Issue 2, pp. 369-373 (1998)

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The antireflection properties of V-grooved gratings in (100) crystalline silicon are studied numerically by use of rigorous electromagnetic theory. This study shows that these gratings can exhibit antireflective behavior only for TM-polarized radiation. The V-grooved structures are analyzed as a function of grating period, duty cycle, and depth of a SiO2 mask layer that is added to the tops of the V-grooved mesas. Specific antireflection grating designs (the duty cycle and depth versus the period) are presented that illustrate TM-polarized reflectivity much less than 10-3 with periods as high as 80% the wavelength of incident radiation. These designs exhibit good tolerance to fabrication errors and grating’s plane deviations in a planar-diffraction mounting.

© 1998 Optical Society of America

OCIS Codes
(040.6040) Detectors : Silicon
(050.1950) Diffraction and gratings : Diffraction gratings
(260.2110) Physical optics : Electromagnetic optics
(310.1210) Thin films : Antireflection coatings

Original Manuscript: April 24, 1997
Revised Manuscript: July 15, 1997
Published: January 10, 1998

Mark Auslender, David Levy, and Shlomo Hava, "One-dimensional antireflection gratings in (100) silicon: a numerical study," Appl. Opt. 37, 369-373 (1998)

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