Abstract

We report on the fabrication of a solar-UV monitoring system that uses GaN-based photodetectors. GaN photoconductors, p– n junction photodiodes, and Schottky barrier photodiodes have been fabricated and characterized as UV sensors. The best performances are obtained in Schottky photodiodes, which show a linear response, a flat responsivity of 100 mA/W, a visible rejection ratio higher than 10³, and a noise-equivalent power of 1 nW/Hz^-1/2. Preliminary data on Al_xGa_1-xN (x = 0.15, 0.22) detectors are also presented. Using GaN Schottky diodes, we fabricate and evaluate a complete solar-UV detection head.

© 1998 Optical Society of America

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