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Applied Optics

Applied Optics

APPLICATIONS-CENTERED RESEARCH IN OPTICS

  • Vol. 37, Iss. 22 — Aug. 1, 1998
  • pp: 5145–5149

Spectroellipsometric method for process monitoring semiconductor thin films and interfaces

Morten Kildemo, Romain Brenot, and Bernard Drévillon  »View Author Affiliations


Applied Optics, Vol. 37, Issue 22, pp. 5145-5149 (1998)
http://dx.doi.org/10.1364/AO.37.005145


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Abstract

Real-time monitoring by multiwavelength phase-modulated ellipsometry of the growth of plasma-deposited microcrystalline silicon (μc-Si) is presented. We discuss the construction of a growth model for process monitoring, and, in particular, we treat the inhomogeneity in the μc-Si layer by using an approximation of the reflection coefficient known as the WKBJ method. By also using the Bruggeman effective medium theory to describe the optical properties of μc-Si, we demonstrate monitoring the crystallinity in the upper and the lower part of the layer together with the thickness. The inversion algorithms thus remain very fast, with calculation times within 5 s on a standard Pentium computer. This makes possible precise control of the thickness and the crystallization of both the top and the bottom interface of the layer during the elaboration of devices such as solar cells and thin-film transistors.

© 1998 Optical Society of America

OCIS Codes
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(120.5700) Instrumentation, measurement, and metrology : Reflection
(130.5990) Integrated optics : Semiconductors
(310.0310) Thin films : Thin films

History
Original Manuscript: December 9, 1997
Revised Manuscript: April 14, 1998
Published: August 1, 1998

Citation
Morten Kildemo, Romain Brenot, and Bernard Drévillon, "Spectroellipsometric method for process monitoring semiconductor thin films and interfaces," Appl. Opt. 37, 5145-5149 (1998)
http://www.opticsinfobase.org/ao/abstract.cfm?URI=ao-37-22-5145


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References

  1. P. Roca i Cabarrocas, N. Layadi, T. Heitz, B. Drévillon, I. Solomon, “Substrate selectivity in the formation of microcrystalline silicon: Mechanisms and technological consequences,” Appl. Phys. Lett. 66, 3609–3611 (1995). [CrossRef]
  2. M. Fang, B. Drévillon, “In situ spectroellipsometry study of the nucleation and growth of microcrystalline silicon,” J. Appl. Phys. 70, 4894–4898 (1991). [CrossRef]
  3. D. E. Aspnes, “Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements,” J. Opt. Soc. Am. A 10, 974–983 (1993). [CrossRef]
  4. S. Kim, R. W. Collins, “Optical characterization of continuous compositional gradients in thin films by real-time spectroscopic ellipsometry,” Appl. Phys. Lett. 67, 3010–3012 (1995). [CrossRef]
  5. M. Kildemo, “Real-time monitoring and growth control of Si-gradient index structures by multiwavelength ellipsometry,” Appl. Opt. 37, 1–12 (1998). [CrossRef]
  6. M. Kildemo, O. Hunderi, B. Drévillon, “Approximation of the reflection coefficient for rapid real time calculation of inhomogenous films,” J. Opt. Soc. Am. A 14, 931–939 (1997). [CrossRef]
  7. B. Drévillon, “Phase-modulated ellipsometry from the ultraviolet to the infrared: in situ applications to the growth of semiconductors,” Prog. Cryst. Growth Charact. Mater. 27, 1–87 (1993). [CrossRef]
  8. D. A. G. Bruggeman, “Berechnung verschiedener physikalisher konstanten von heterogenen substanzen,” Ann. Phys. (Leipzig) 24, 636–679 (1935).
  9. D. E. Aspnes, J. B. Theeten, F. Hottier, “Investigation of effective medium models of microscopic surface roughness by spectroscopic ellipsometry,” Phys. Rev. B 20, 3292–3302 (1979). [CrossRef]
  10. G. E. Jellison, M. F. Chisholm, S. M. Gorbatkin, “Optical functions of chemical vapor deposited thin film silicon determined by spectroscopic ellipsometry,” Appl. Phys. Lett. 62, 3348–3350 (1993). [CrossRef]
  11. W. H. Press, B. P. Flannery, S. A. Teukolsky, W. T. Vetterling, Numerical Recipes (Cambridge U. Press, Cambridge, UK, 1986).

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